? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?00 march 1, 2000-00 features 7400 series t 2 l compatible transfer ratio, 35% typical coupling capacitance, 0.5 pf single, dual, & quad channel industry standard dip package underwriters lab file #e52744 vde approvals #0884 (optional with option 1, add -x001 suf?) description the il74 is an optically coupled pair with a gallium arsenide infrared led and a silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the il74 is especially designed for driving medium-speed logic, where it may be used to eliminate troublesome ground loop and noise problems. also it can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as crt modulation. the ild74 has two isolated channels in a sin- gle dip package; the ilq74 has four isolated channels per package. v de pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3 9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3 9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) 1 2 3 4 8 7 6 5 emitter collector collector emitter anode cathode cathode anode 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 emitter collector collector emitter emitter collector collector emitter anode cathode cathode anode anode cathode cathode anode .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 9 .300 .347 (7.62 8.81) 4 typ. dimensions in inches (mm) single channel dual channel quad channel 1 2 3 6 5 4 base collector emitter anode cathode nc single channel il74 dual channel ild74 quad channel ilq74 phototransistor optocoupler
? 2000 in neon technologies corp. optoelectronics division san jose, ca il/ild/ilq74 www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2 101 march 1, 2000-00 maximum ratings emitter (each channel) peak reverse voltage ...................................................................... 3.0 v continuous forward current .......................................................... 60 ma power dissipation at 25 c........................................................... 100 mw derate linearly from 25 c ..................................................... 1.33 mw/ c detector (each channel) collector-emitter breakdown voltage ............................................... 20 v emitter-base breakdown voltage ..................................................... 5.0 v collector-base breakdown voltage .................................................. 70 v power dissipation at 25 c........................................................... 150 mw derate linearly from 25 c ....................................................... 2.0 mw/ c package isolation test voltage (t=1.0 sec.) ........................................... 5300 v rms isolation resistance v io =500 v, t a =25 c................................................................. 10 12 ? v io =500 v, t a =100 c............................................................... 10 11 ? total package dissipation at 25 c ambient (led plus detector) il74 .......................................................................................... 200 mw ild74 ....................................................................................... 400 mw ilq74 ....................................................................................... 500 mw derate linearly from 25 c il74 ...................................................................................... 2.7 mw/ c ild74 ................................................................................. 5.33 mw/ c ilq74 ................................................................................. 6.67 mw/ c creepage ................................................................................... 7.0 mm clearance ................................................................................... 7.0 mm storage temperature .................................................... 55 c to +150 c operating temperature ................................................ 55 c to +100 c lead soldering time at 260 c ...................................................... 10 sec. electrical characteristics t a =25 c symbol min. typ. max. unit condition emitter forward voltage v f 1.3 1.5 v i f =20 ma reverse current i r 0.1 100 a v r =3.0 v capacitance c o 25 pf v r =0 detector breakdown voltage, collector-emitter bv ceo 20 50 v i c =1.0 ma leakage current, collector-emitter i ceo 5.0 500 na v ce =5.0 v i f =0 capacitance, collector-emitter c ce 10.0 pf v ce =0, f=1.0 mhz package dc current transfer ratio ctr dc 12.5 35 % i f =16 ma, v ce =5.0 v saturation voltage, collector-emitter v cesat 0.3 0.5 v i c =2.0 ma i f =16 ma resistance, input to output r io 100 g ? capacitance, input to output c io 0.5 pf switching times t on , t off 3.0 sr l =100 ? , v ce =10 v, i c =2.0 ma figure 1. forward voltage versus forward current figure 2. normalized non-saturated and saturated ctr at t a =25 c versus led current figure 3. normalized non-saturated and saturated ctr at t a =50 c versus led current figure 4. normalized non-saturated and saturated ctr at t a =70 c versus led current 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 if - forward current - ma vf - forward voltage - v ta = -55 c ta = 25 c ta = 85 c .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr normalized to: v ce = 10 v, i f = 10 ma t a = 25 c ctrce(sat) v ce = 0.4 v nctr(sat) nctr 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma t a = 50 c nctr - normalized ctr nctr(sat) nctr normalized to: v ce = 10v, i f = 10 ma, t a = 25 c ctrce(sat) v ce = 0.4v 100 10 1 .1 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr normalized to: v ce = 10 v, i f = 10 ma t a = 25 c ctrce(sat) v ce = 0.4v t a = 70 c nctr(sat) nctr
? 2001 in neon technologies corp. optoelectronics division san jose, ca il/ild/ilq74 www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2 102 march 1, 2000-00 figure 5. normalized non-saturated and saturated ctr at t a =85 c versus led current figure 6. collector-emitter current versus temperature and led current figure 7. collector-emitter leakage current versus temperature figure 8. normalized ctr cb versus led current and temperature figure 9. collector base photocurrent versus led current figure 10. normalized photocurrent versus i f and temperature figure 11. normalized non-saturated hfe versus base current and temperature figure 12. normalized saturated hfe versus base current and temperature .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr normalized to: v ce = 10 v, i f = 10 ma, t a = 25 c ctrce(sat) v ce = 0.4 v nctr(sat) nctr t a = 85 c 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50? 70? 85? if - led current - ma ice - collector current - ma 25? -20 0 20 40 60 80 100 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 t a - ambient temperature - c i ceo - collector-emitter - na typical v ce = 10 v .1 1 10 100 0. 0 0. 5 1. 0 1. 5 25? 50? 70? if - led current - ma nctrcb - normalized ctrcb normalized to: if =10 ma vcb = 9.3 v ta = 25? 100 10 1 .1 .01 .1 1 10 10 0 100 0 if - led current - m icb - collector base photocurrent - ? icb = 1.0357 *if ^1.3631 ta = 25? .1 1 10 100 10 1 .1 .01 nib-t a =-20 c nib,t a =25 c nib,t a =50 c nib,t a =70 c i f - led current - ma normalized photocurrent normalized to: i f = 10 ma, t a = 25 c 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 ib - base current - ? nhfe - normalized hfe ib = 20? vce = 10 v ta = 25? -20? 25? 50? 70? normalized to: 1 10 100 1000 1.5 1.0 0.5 0.0 i b - base current - ( a) nhfe(sat) - normalized saturated hfe -20 c 50 c 70 c v ce = 0.4 v normalized to: v ce = 10 v i b = 20 a t a = 25 c 25 c
? 2000 in neon technologies corp. optoelectronics division san jose, ca il/ild/ilq74 www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2 103 march 1, 2000-00 figure 13. propagation delay versus collector load resistor figure 14. propagation delay versus collector load resistor 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 rl - collector load resistor - k ? tplh - propagation delay - s tphl - propagation delay - s tplh tphl ta = 25?, if = 10ma vcc = 5 v, vth = 1.5 v 10 0 1 0 1 .1 1 1 0 10 0 100 0 1.0 1.5 2.0 2.5 rl - collector load resistor - k ? tplh - propagation delay - s tphl - propagation delay - s tplh tph l ta = 25?, if = 10ma vcc = 5 v, vth = 1.5 v
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